2SD2592L, 2sd2592s silicon npn triple diffused low frequency amplifier 1st. edition december 1997 target specification features high voltage : v (br)ceo = 300v min. outline 1 2 3 4 4 1 2 3 1. base 2. collector 3. emitter 4. collector dpak
2SD2592L, 2sd2592s 2 absolute maximum ratings (ta = 25c) item symbol ratings unit collector to base voltage v cbo 300 v collector to emitter voltage v ceo 300 v emitter to base voltage v ebo 5v collector current i c 0.15 a collector peak current i c(peak) 0.6 a collector power dissipation pc note1 10 w junction temperature tj 150 c storage temperature tstg C55 to +150 c note: 1. value at tc = 25c electrical characteristics (ta = 25c) item symbol min typ max unit test conditions collector to emitter breakdown voltage v (br)ceo 300 v i c = 1ma, r be = emitter to base breakdown voltage v (br)ebo 5vi e = 10ma, i c = 0 collector cutoff current i cbo 10 m av cb = 300v, i e = 0 emitter cutoff current i ebo 10 m av eb = 4v, i c = 0 dc current transfer ratio h fe1 60 200 v ce = 1.5v, i c = 20ma dc current transfer ratio h fe2 60 v ce = 5v, i c = 100ma collector to emitter saturation voltage v ce(sat) 1.0 i c = 100ma, i b = 5ma base to emitter saturation voltage v be(sat) 1.5 i c = 100ma, i b = 5ma gain bandwidth product f t 16 mhz v ce = 1.5a, i c = 20ma
2SD2592L, 2sd2592s 3 package dimensions unit: mm hitachi code eiaj ( l type) eiaj ( s type) jedec dpak sc?3 sc?4 6.5 ?0.5 5.4 ?0.5 1.15 ?0.1 0.8 ?0.1 2.3 ?0.5 0.55 ?0.1 2.29 ?0.5 0.55 ?0.1 1.5 max 1.7 ?0.5 5.5 ?0.5 3.1 ?0.5 7.2 16.2 ?0.5 2.29 ?0.5 type l 6.5 ?0.5 5.4 ?0.5 1.15 ?0.1 0.8 ?0.1 2.3 ?0.5 0.55 ?0.1 1.7 ?0.5 5.5 ?0.5 9.5 ?0.5 2.5 ?0.5 2.29 ?0.5 2.29 ?0.5 1.2 max 0.55 ?0.1 0 ~ 0.25 s type
2SD2592L, 2sd2592s 4 when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications.
|
